Infrared Semiconductor Laser Crystallization of Silicon Thin Films Using Diamond-Like Carbon as Photoabsorption Layer

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We report the crystallization of silicon thin films using a continuous wave (CW) infrared semiconductor laser with the assistance of diamond-like carbon (DLC) as a photoabsorption layer. A beam of a 940-nm-wavelength CW semiconductor laser was irradiated to samples of 400-nm-thick DLC/50-nm-thick Si/glass with a laser power density of 7.4–24.7 kW/cm2. The beam was scanned on the samples at a speed of 15–100 cm/s. The DLC layer was heated to a temperature above the melting point of silicon by effective absorption of laser light. Thus, the underlying 50-nm-thick silicon films were crystallized by the heat defused from DLC. It was found that the threshold energy density for the crystallization of silicon films decreased as the laser power density increased. The maximum crystallinity factors estimated from Raman scattering spectral data of silicon films were 1 and 0.78 for laser power densities of 24.7 and 7.8 kW/cm2, respectively. Electron backscattering diffraction pattern (EBSD) measurements revealed that crystalline grains were randomly oriented with an average size of 3 μm.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(3B), 1254-1257, 2007-03-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018901974
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8694376
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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