Silicon nitride as dielectric medium deposited at ultra high deposition rate (>7nm/s) using hot-wire chemical vapor deposition

• Vasco Verlaan

• Silvester Houweling

• Karine Van der Werf

書誌事項

タイトル別名

• Silicon nitride as dielectric medium deposited at ultra high deposition rate 7nm s using hot wire chemical vapor deposition
• Special issue: Active-matrix flatpanel displays and devices: TFT technologies and related materials
• Special issue Active matrix flatpanel displays and devices TFT technologies and related materials

抄録

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

収録刊行物

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (3B), 1290-1294, 2007-03

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

キーワード

• hot wire chemical vapor deposition
• silicon nitride
• deposition rate
• mass density
• hydrogen bonding
• etch rate
• breakdown field

詳細情報

• CRID: 1520572357385416448
• NII論文ID: 10018902080
• NII書誌ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.46.1290
• NDL書誌ID: 8694490
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8694490
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.1290
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.1290/pdf
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • Crossref
  • CiNii Articles