Silicon Nitride as Dielectric Medium Deposited at Ultra High Deposition Rate (${>}7$ nm/s) using Hot-Wire Chemical Vapor Deposition

この論文にアクセスする

この論文をさがす

著者

    • Verlaan Vasco Verlaan Vasco
    • Utrecht University, Faculty of Science, Department of Physics and Astronomy, SID—Physics of Devices, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands
    • Goldbach Hanno D.
    • Utrecht University, Faculty of Science, Department of Physics and Astronomy, SID—Physics of Devices, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands
    • Schropp Ruud E. I.
    • Utrecht University, Faculty of Science, Department of Physics and Astronomy, SID—Physics of Devices, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands

抄録

The deposition process of silicon nitride (SiNx) by hot-wire chemical vapor deposition (HWCVD) is investigated by exploring the effects of process pressure and gas-flow ratio on the composition of the SiNx films. It appeared that the N/Si ratio in the layers determines the structural properties of the deposited films. The volume concentration of Si-atoms in the deposited films appeared to be independent of N/Si ratio. Because in a silane/ammonia mixture the decomposition rate of ammonia is smaller than that of silane, the properties of the SiNx layers are largely determined by the ability to incorporate nitrogen into the growing material. An increase in the process pressure greatly enhances the efficiency of the ammonia decomposition, which is ascribed to the higher partial pressure of atomic hydrogen originating from the decomposition of silane molecules. With this knowledge we were able to increase the deposition rate of high-density SiNx films to a very high value of 7 nm/s, much faster than any commercial plasma deposition technique can offer. Despite this high deposition rate, the SiNx layers still posses a high mass density of 2.6 g/cm3 and good thermal stability. Current–voltage ($I$–$V$) and capacitance–voltage ($C$–$V$) measurements show that silicon nitride deposited at high deposition rate has good potential for application as the dielectric layer in various applications.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(3B), 1290-1294, 2007-03-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

参考文献:  19件

参考文献を見るにはログインが必要です。ユーザIDをお持ちでない方は新規登録してください。

各種コード

  • NII論文ID(NAID)
    10018902080
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8694490
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
ページトップへ