Hot Carrier Effects in p-Channel Polycrystalline Silicon Thin Film Transistors Fabricated on Flexible Substrates
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We studied the variations of electrical characteristics induced by bias stress on low-temperature polycrystalline silicon (LTPS) p-channel thin film transistors (TFTs) fabricated on metal foil. The transfer characteristics resulted quite stable upon application of prolonged bias stress, whereas the output characteristics presented a reduction of kink-effect. These results have been explained by using a self-consistent model based on the trapping of hot electrons, generated by impact ionisation and injected near drain contact, at both front (gate oxide/channel) and back (substrate/channel) interfaces.
- Jpn J Appl Phys
Jpn J Appl Phys 46(3B), 1299-1302, 2007-03-30
INSTITUTE OF PURE AND APPLIED PHYSICS