Hot Carrier Effects in p-Channel Polycrystalline Silicon Thin Film Transistors Fabricated on Flexible Substrates

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抄録

We studied the variations of electrical characteristics induced by bias stress on low-temperature polycrystalline silicon (LTPS) p-channel thin film transistors (TFTs) fabricated on metal foil. The transfer characteristics resulted quite stable upon application of prolonged bias stress, whereas the output characteristics presented a reduction of kink-effect. These results have been explained by using a self-consistent model based on the trapping of hot electrons, generated by impact ionisation and injected near drain contact, at both front (gate oxide/channel) and back (substrate/channel) interfaces.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(3B), 1299-1302, 2007-03-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018902114
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8694546
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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