Hot carrier effects in p-channel polycrystalline silicon thin film transistors fabricated on flexible substrates

• Luigi Mariucci

• Paolo Gaucci

• Antonio Valletta

Bibliographic Information

Other Title

• Hot carrier effects in p channel polycrystalline silicon thin film transistors fabricated on flexible substrates
• Special issue: Active-matrix flatpanel displays and devices: TFT technologies and related materials
• Special issue Active matrix flatpanel displays and devices TFT technologies and related materials

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (3B), 1299-1302, 2007-03

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• polycrystalline silicon
• thin film transistors
• p-channel
• hot carrier effects

Details

• CRID: 1520290883950028928
• NII Article ID: 10018902114
• NII Book ID: AA10457675
• ISSN: 00214922
• ISSN: 13474065
• DOI: 10.1143/jjap.46.1299
• NDL BIB ID: 8694546
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8694546
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.1299
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.46.1299/pdf
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • Crossref
  • CiNii Articles