Fine-Patterned Organic Thin Film Transistors using Solution Organic Semiconductor Materials

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著者

    • Kim Chang-Dong
    • LG.PHILIPS LCD R&D Center, 533, Hogae-dong, Dongan-gu, Anyang-shi, Kyongki-do 431-080, Korea
    • Kang Hochul
    • LG.PHILIPS LCD R&D Center, 533, Hogae-dong, Dongan-gu, Anyang-shi, Kyongki-do 431-080, Korea
    • Kim Min-Joo
    • LG.PHILIPS LCD R&D Center, 533, Hogae-dong, Dongan-gu, Anyang-shi, Kyongki-do 431-080, Korea
    • Chung In-Jae
    • LG.PHILIPS LCD R&D Center, 533, Hogae-dong, Dongan-gu, Anyang-shi, Kyongki-do 431-080, Korea

抄録

To integrate solution-processible organic semiconductors in the array of thin-film transistors, fine-patterned organic thin-film transistors were fabricated by photolithography. Gold, which has a high work function, was used as a source–drain electrode to reduce the energy barrier between the organic semiconductor and the source–drain. Stacked double layers of gold and chromium were deposited and etched on a glass substrate to enhance the poor adhesion of gold on glass, and then a self-assembled monolayer was formed on them. Solutions of an organic semiconductor and a low-$k$ organic gate insulator were spun by a spin coater and patterned by dry etching using a gate metal as a mask. The devices fabricated by this method show good electrical properties, average field effect mobilities of 0.2–0.3 cm2 V-1 s-1, and an on/off current ratio of over $10^{5}$ in device dimensions of $W/L=84/6$ μm. The leakage current through the gate insulator between the gate and the source–drain was similar to that of SiNx in amorphous silicon thin-film transistor (a-Si TFT), which is lower than 10 pA. When the bias-stress stability of organic thin film transistors (OTFTs) was compared with that of a-Si TFT, the threshold voltage shift of OTFT was comparable to that of a-Si TFT, which is smaller than 1 V. However, the stability of OTFT should be further improved and discussed.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 46(3B), 1333-1336, 2007-03-30 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018902210
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8694580
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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