Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing
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A new laser annealing crystallization method for enhancing the crystallinity of polycrystalline Si (poly-Si) is demonstrated. This method utilizes double-layered amorphous Si films and the high penetration property of the green laser in poly-Si films. The simultaneous crystallization of the upper and lower a-Si layers of the double-layered substrate is achieved, with the upper a-Si layer becoming poly-Si with very large crystal grains. Furthermore, the crystallization laser energy of this double-layered substrate is reduced by approximately 30% compared with that of a conventional single-layer a-Si substrate, suggesting a thermal reserving role of the lower a-Si layer when it crystallizes upon the irradiation of green laser light.
- Jpn J Appl Phys
Jpn J Appl Phys 46(8), L164-L166, 2007-03-25
INSTITUTE OF PURE AND APPLIED PHYSICS