Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing

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抄録

A new laser annealing crystallization method for enhancing the crystallinity of polycrystalline Si (poly-Si) is demonstrated. This method utilizes double-layered amorphous Si films and the high penetration property of the green laser in poly-Si films. The simultaneous crystallization of the upper and lower a-Si layers of the double-layered substrate is achieved, with the upper a-Si layer becoming poly-Si with very large crystal grains. Furthermore, the crystallization laser energy of this double-layered substrate is reduced by approximately 30% compared with that of a conventional single-layer a-Si substrate, suggesting a thermal reserving role of the lower a-Si layer when it crystallizes upon the irradiation of green laser light.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 46(8), L164-L166, 2007-03-25

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018902932
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8695194
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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