Continuous-Wave Operation of $m$-Plane InGaN Multiple Quantum Well Laser Diodes
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Continuous-wave (CW) operation of nonpolar $m$-plane InGaN/GaN laser diodes (LDs) with the lasing wavelengths approximately 400 nm was demonstrated. The threshold current was 36 mA (4.0 kA/cm2) for the CW operation [28 mA (3.1 kA/cm2) for pulsed mode], being comparable to that of conventional $c$-plane violet LDs. Both the LDs with the stripes parallel to $a$- and $c$-axes showed TE mode operation, according to the polarization selection rules of the transitions in strained InGaN. The $c$-axis stripe LDs exhibited lower threshold current density, since the lowest energy transition is allowed. As is the case with the $m$-plane light emitting diodes fabricated on the free-standing $m$-plane GaN bulk crystals [Okamoto et al.: Jpn. J. Appl. Phys. 45 (2006) L1197], the LDs shown in this paper did not have distinct dislocations, stacking faults, or macroscopic cracks. Nonpolar $m$-plane GaN-based materials are coming into general use.
- Jpn J Appl Phys
Jpn J Appl Phys 46(9), L187-L189, 2007-03-25
INSTITUTE OF PURE AND APPLIED PHYSICS