X-ray Induced Effects on Photocurrents in Amorphous Se Films

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Amorphous selenium (a-Se) is one of the X-ray photoconductors that is available for use in recently developed direct conversion flat panel X-ray image detectors for medical imaging. To obtain a better understanding of trapping and recombination effects in a-Se, we have studied light and X-ray induced photocurrents in a-Se films. The residual photocurrent, after X-ray exposure, decreases in sandwich cells whereas it increases in coplanar cells. These effects are recovered over a time scale of hours. We show that the results can be interpreted by using valence alternation pair (VAP) type charged defects.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 46(9), L192-L195, 2007-03-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018903047
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8695340
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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