Electric Field Breakdown of Lateral Schottky Diodes of Diamond

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著者

    • Ito Toshimichi
    • Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan

抄録

Current–voltage characteristics of Al lateral Schottky diodes fabricated on homoepitaxial diamond (100) films were analyzed. The currents in reverse-bias voltages smaller and larger than 3 V were well explained by the image-force lowering mechanism modified by localized-field enhancement and the thermionic-field emission mechanism, respectively. An electric field breakdown was observed when the maximum electric field was in the range 1.08–1.46 MV/cm. The breakdown electric field became large with increasing the Schottky barrier height. These features suggest that the electric field breakdown occurred at the electrode fringe due to the field enhancement.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 46(9), L196-L198, 2007-03-25 

    Japan Society of Applied Physics

参考文献:  9件

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各種コード

  • NII論文ID(NAID)
    10018903062
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8695355
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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