Electric Field Breakdown of Lateral Schottky Diodes of Diamond
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Current–voltage characteristics of Al lateral Schottky diodes fabricated on homoepitaxial diamond (100) films were analyzed. The currents in reverse-bias voltages smaller and larger than 3 V were well explained by the image-force lowering mechanism modified by localized-field enhancement and the thermionic-field emission mechanism, respectively. An electric field breakdown was observed when the maximum electric field was in the range 1.08–1.46 MV/cm. The breakdown electric field became large with increasing the Schottky barrier height. These features suggest that the electric field breakdown occurred at the electrode fringe due to the field enhancement.
- Jpn J Appl Phys
Jpn J Appl Phys 46(9), L196-L198, 2007-03-25
INSTITUTE OF PURE AND APPLIED PHYSICS