Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures

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著者

    • Wu Yuan
    • Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
    • Wong Man Hoi
    • Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
    • Grundmann Michael
    • Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
    • Keller Stacia
    • Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
    • DenBaars Steven P.
    • Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.
    • Speck James S.
    • Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
    • Mishra Umesh K.
    • Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

抄録

N-polar $(000\bar{1})$ GaN templates were patterned using holographic lithography to create nanopillar (NP) and nanostripe (NS) arrays. InGaN and GaN was subsequently regrown on the patterned wafers by metalorganic chemical vapor deposition (MOCVD). The impact of changes in V/III ratio and growth temperature were investigated using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and photoluminescence (PL). Highly selective growth of InGaN and GaN on planes close to the $\{10\bar{1}0\}$ $m$-planes was observed over a wide range of growth conditions as well as different facet formation compared to regrowth on Ga-polar (0001) NP and NS arrays.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 46(10), L230-L233, 2007-03-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018903194
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8695474
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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