High Speed Chalcogenide Random Access Memory Based on Si2Sb2Te5

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著者

    • Song Zhitang Song Zhitang
    • Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    • Rao Feng [他] Rao Feng
    • Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    • Feng Gaoming
    • Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    • Liu Bo
    • Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    • Feng Songlin
    • Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    • Chen Bomy
    • Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, U.S.A.

抄録

A high speed chalcogenide random access memory based on Si2Sb2Te5, which is outstanding in data retention and electrical performance, has been fabricated by 0.18-μm complementary metal oxide semiconductor technology. set and reset times are 31 and 10 ns when the corresponding voltage pulses are 2 and 3.5 V, respectively. Si2Sb2Te5 material possesses better data retention and lower threshold current comparing to Ge2Sb2Te5 does. Endurance up to $10^{6}$ cycles with a resistance ratio of 100 has been achieved.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 46(11), L247-L249, 2007-03-25 

    Japan Society of Applied Physics

参考文献:  16件

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各種コード

  • NII論文ID(NAID)
    10018903265
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8695569
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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