Characteristics of Field Effect Transistors based on Fullerene Derivatives

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著者

    • Morita Takeomi Morita Takeomi
    • Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu 808-0196, Japan
    • Takashima Wataru Takashima Wataru
    • Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu 808-0196, Japan
    • Kaneto Keiichi Kaneto Keiichi
    • Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu 808-0196, Japan

抄録

Transport properties of nine fullerene derivatives, [6,6]-phenyl-C61-butyric methyl ester (PCBM), phenyl C61-butyric acid i-butyl ester (PCBIB), and others (PCBNB, PYC11-PhOH, PMFE, PMFTB, 70PCBM, 56PCBM, 60X-LT) were studied by measuring of the field effect mobility. FETs were fabricated by spin coating of their chloroform solutions on Si/SiO2 substrate with Au top contacts. The field induced carriers were all negative. The threshold voltage to induce carrier was more than 40 V. Mobility of PCBM was $1.1\times 10^{-2}$ cm2/(V s) being the largest amongst them. The mobilities of PCBIB, PCBNB, 70PCBM were ranging $1.7--5.6\times 10^{-3}$ cm2/(V s). The mobilities of PYC11-phOH, 56PCBM, 60X-LT were ranging $4.0--6.4\times 10^{-4}$ cm2/(V s) and those of PMFE and PMFTB being less than $10^{-7}$ cm2/(V s). The transport properties are discussed taking the surface morphologies and absorption spectra into consideration.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters  

    Japanese journal of applied physics. Pt. 2, Letters 46(11), L256-L258, 2007-03-25 

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018903312
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    8695598
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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