Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications
収録刊行物
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- IEEE Electron Device Lett.
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IEEE Electron Device Lett. 8 (10), 573-576, 1986
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- CRID
- 1571980075279342208
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- NII論文ID
- 10018969889
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- データソース種別
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- CiNii Articles