MOCVD growth of ZnO thin films using Oxygen remote plasma

  • NAKAMURA Atsushi
    Graduate School of Electronic Science of Technology, Shizuoka University
  • SHIMIZU Yoshimi
    Research Institute of Electronics, Shizuoka University
  • AOKI Toru
    Research Institute of Electronics, Shizuoka University
  • TANAKA Akira
    Graduate School of Electronic Science of Technology, Shizuoka University:Research Institute of Electronics, Shizuoka University
  • TEMMYO Jiro
    Graduate School of Electronic Science of Technology, Shizuoka University:Research Institute of Electronics, Shizuoka University

Bibliographic Information

Other Title
  • 酸素リモートプラズマを用いたZnOのMOCVD成長(発光型・非発光型ディスプレイ合同研究会)
  • 酸素リモートプラズマを用いたZnOのMOCVD成長
  • サンソ リモートプラズマ オ モチイタ ZnO ノ MOCVD セイチョウ

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Abstract

ZnO has been grown by a remote plasma enhanced MOCVD technique using Oxygen plasma from Diethyl Zinc (DEZn). When hydrogen and nitrogen were used as carrier gas, the difference was looked at by the growth rate of ZnO film, and growth rate became large when a hydrogen carrier was used. Moreover, growth rate changed also with the rates of hydrogen gas flux and plasma oxygen flux. From the result which measured the plasma luminescence spectrum at the time of crystal growth, the growth mechanism by the interaction by oxygen plasma and hydrogen gas was proposed.

Journal

  • ITE Technical Report

    ITE Technical Report 27.4 (0), 65-68, 2003

    The Institute of Image Information and Television Engineers

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