Suppression of Formation of Sr Vacancies in SrS:Ce Thin Film EL Devices by Alkali Metal Doping
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- FUKADA Haruki
- Department of Electrical and Electronic Engineering, Tottori University:(Present address)Satellite Venture Business Laboratory, Shizuoka University
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- SASAKURA Asuka
- Department of Electrical and Electronic Engineering, Tottori University
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- KIMURA Takahiro
- Department of Electrical and Electronic Engineering, Tottori University
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- OHMI Koutoku
- Department of Electrical and Electronic Engineering, Tottori University
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- TANAKA Shosaku
- Department of Electrical and Electronic Engineering, Tottori University
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- KOBAYASHI Hiroshi
- Department of Electrical and Electronic Engineering, Tottori University
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- NAKANISHI Yoichiro
- Research Institute of Electronics, Shizuoka University
Bibliographic Information
- Other Title
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- SrS:Ce薄膜EL素子のアルカリ金属添加によるSr欠陥の補償効果(発光型・非発光型ディスプレイ合同研究会)
- SrS:Ce薄膜EL素子のアルカリ金属添加によるSr欠陥の補償効果
- SrS Ce ハクマク EL ソシ ノ アルカリ キンゾク テンカ ニ ヨル Sr ケッカン ノ ホショウ コウカ
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Abstract
Alkali metal doped SrS:Ce,M (M=Na, K, or Rb) thin film EL devices have been prepared by electron-beam evaporation. Alkali metal doping causes suppression of formation of Sr vacancies, and results in decrease of Ce^<3+>-V_<Sr> complex center formation. Among those dopants, Rb is the most effective. The SrS:Ce,Rb phosphor powder prepared with Ce concentration of 1.0 mol% shows the strongest photoluminescence with the bluish-green luminescence due to isolated Ce^<3+> centers.
Journal
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- ITE Technical Report
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ITE Technical Report 27.4 (0), 37-40, 2003
The Institute of Image Information and Television Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1390282679504583552
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- NII Article ID
- 10018990238
- 110003268308
- 110003672174
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- NII Book ID
- AN1059086X
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- ISSN
- 09135685
- 24241970
- 13426893
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed