Suppression of Formation of Sr Vacancies in SrS:Ce Thin Film EL Devices by Alkali Metal Doping

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  • FUKADA Haruki
    Department of Electrical and Electronic Engineering, Tottori University:(Present address)Satellite Venture Business Laboratory, Shizuoka University
  • SASAKURA Asuka
    Department of Electrical and Electronic Engineering, Tottori University
  • KIMURA Takahiro
    Department of Electrical and Electronic Engineering, Tottori University
  • OHMI Koutoku
    Department of Electrical and Electronic Engineering, Tottori University
  • TANAKA Shosaku
    Department of Electrical and Electronic Engineering, Tottori University
  • KOBAYASHI Hiroshi
    Department of Electrical and Electronic Engineering, Tottori University
  • NAKANISHI Yoichiro
    Research Institute of Electronics, Shizuoka University

Bibliographic Information

Other Title
  • SrS:Ce薄膜EL素子のアルカリ金属添加によるSr欠陥の補償効果(発光型・非発光型ディスプレイ合同研究会)
  • SrS:Ce薄膜EL素子のアルカリ金属添加によるSr欠陥の補償効果
  • SrS Ce ハクマク EL ソシ ノ アルカリ キンゾク テンカ ニ ヨル Sr ケッカン ノ ホショウ コウカ

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Abstract

Alkali metal doped SrS:Ce,M (M=Na, K, or Rb) thin film EL devices have been prepared by electron-beam evaporation. Alkali metal doping causes suppression of formation of Sr vacancies, and results in decrease of Ce^<3+>-V_<Sr> complex center formation. Among those dopants, Rb is the most effective. The SrS:Ce,Rb phosphor powder prepared with Ce concentration of 1.0 mol% shows the strongest photoluminescence with the bluish-green luminescence due to isolated Ce^<3+> centers.

Journal

  • ITE Technical Report

    ITE Technical Report 27.4 (0), 37-40, 2003

    The Institute of Image Information and Television Engineers

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