Fabrication of high breakdown voltage Zr_xSi_yN insulator and its application to ZnS:Mn,LiF red electroluminescent devices

• Yamamoto Kazushi

  Kanazawa Institute of Technology Advanced Optical Electro Magnetic Field Science Lab.

• Mikami Akiyoshi

  Kanazawa Institute of Technology Advanced Optical Electro Magnetic Field Science Lab.

Bibliographic Information

Other Title

• 高耐圧Zr_xSi_yN窒化物絶縁層の作製とZnS:Mn,LiF赤色系EL素子への応用(発光型/非発光型ディスプレイ合同研究会)
• 高耐圧ZrxSiyN窒化物絶縁層の作製とZnS:Mn,LiF赤色系EL素子への応用
• コウタイアツ ZrxSiyN チッカブツ ゼツエンソウ ノ サクセイ ト ZnS Mn LiF アカイロケイ EL ソシ エ ノ オウヨウ
• コウタイアツ ZrxSiyN チッカブツ ゼツエンソウ ノ サクセイ ト ZnS Mn LiF セキショクケイ EL ソシ エ ノ オウヨウ

Abstract

Zr_xSi_yN and ZnS:Mn,LiF thin films have been fabricated as new materials for the high breakdown voltage insulating layer and the red emitting phosphor by a rf-magnetron sputtering technique. Zr_xSi_yN film shows the high breakdown voltage more than 9MV/cm, and applied to an inorganic EL devices with a new phosphor of ZnS:Mn,LiF. It was found that the red emission band appears around 670〜680nm and rapidly grows with the increase of LiF concentration. The color coordinate of (0.62,0.37) was obtained in the red EL device with "color by filter" structure.

Journal

• ITE Technical Report

  ITE Technical Report 26.5 (0), 61-66, 2002

  The Institute of Image Information and Television Engineers

Keywords

• High breakdown voltage insulator
• Sputtering
• Red phosphor
• Electroluminescence

Details

• CRID: 1390282679502534016
• NII Article ID: 10018990895
• NII Article ID: 110003671587
• NII Article ID: 110003269896
• NII Book ID: AN1059086X
• ISSN: 09135685
• ISSN: 24241970
• ISSN: 13426893
• DOI: 10.11485/itetr.26.5.0_61
• NDL BIB ID: 6118014
• NDL BIB ID: 6081884
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6118014
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6081884
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • CiNii Articles
• Abstract License Flag: Disallowed