A 73GHz f_T 0.18μm RF-SiGe BiCMOS Technology considering Thermal Budget Trade-off and with reduced Boron-spike Effect on HBT Characteristics

• HASHIMOTO T.

  ULSI Device Development Division, NEC Corporation

• SATO F.

  ULSI Device Development Division, NEC Corporation

• AOYAMA T.

  ULSI Device Development Division, NEC Corporation

• SUZUKI H.

  ULSI Device Development Division, NEC Corporation

• YOSHIDA H.

  ULSI Device Development Division, NEC Corporation

• FUJII H.

  ULSI Device Development Division, NEC Corporation

• YAMAZAKI T.

  ULSI Device Development Division, NEC Corporation

Bibliographic Information

Other Title

• SiGeBiCMOS技術における熱処理トレードオフおよびボロンスパイク効果低減の検討

Journal

• 電気学会研究会資料. EDD, 電子デバイス研究会

  電気学会研究会資料. EDD, 電子デバイス研究会 2001 (44), 7-11, 2001-03-08

Keywords

• SiGe BiCMOS
• cut-off frequency
• maximum oscillation frequency

Details

• CRID: 1571417125342844032
• NII Article ID: 10018991931
• NII Book ID: AN1044178X
• Text Lang: ja
• Data Source:
  • CiNii Articles