Secondary Electron Emission Characteristics of MgO Thin Films Prepared by Ion-Plating Method
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- Kajiyama H.
- R&D Center, ShinMaywa Industries, Ltd.
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- Uetani K.
- Hitachi Research Laboratory, Hitachi, Ltd.
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- Kato A.
- R&D Center, ShinMaywa Industries, Ltd.
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- Tokomoto I.
- Hitachi Research Laboratory, Hitachi, Ltd.
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- Koizumi Y.
- Hitachi Research Laboratory, Hitachi, Ltd.
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- Nose K.
- Hitachi Research Laboratory, Hitachi, Ltd.
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- Ihara Y.
- Hitachi Research Laboratory, Hitachi, Ltd.
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- Onisawa K.
- R&D Center, ShinMaywa Industries, Ltd.
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- Minemura T.
- R&D Center, ShinMaywa Industries, Ltd.
Bibliographic Information
- Other Title
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- イオンプレーティング法で作製したMgO薄膜の二次電子放電特性
- イオンプレーティング法で作製したMgO薄膜の二次電子放出特性
- イオンプレーティングホウ デ サクセイ シタ MgO ハクマク ノ 2ジ デンシ ホウシュツ トクセイ
- イオンプレーティングホウ デ サクセイ シタ MgO ハクマク ノ ニジ デンシ ホウシュツ トクセイ
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Abstract
Secondary electron emission coefficient(γ)of MgO film prepared by an advanced ionplating method was measured. The γ value of MgO film prepared by an IP method was larger than that of the film prepared that by conventional electron beam evaporation(EB)method. In IP films, fine columnar structures grew vertically from substrate interface and surface morphology was identified well. We supposed that these film structures contributed to the improvement of γemission from MgO film.
Journal
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- ITE Technical Report
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ITE Technical Report 25.4 (0), 31-35, 2001
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Details 詳細情報について
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- CRID
- 1390282679502798080
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- NII Article ID
- 110003689029
- 10018992285
- 110003269730
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- NII Book ID
- AN1059086X
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- ISSN
- 09135685
- 24241970
- 13426893
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed