Production of Nitrogen-containing Carbon Plasma using Shunting Arc Discharge for Carbon Nitride Films Preparation
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- Imanishi Keigo
- Iwate University
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- Kumagai Osamu
- Hitachi Plant Technologies Co., Inc.
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- Mukaigawa Seiji
- Iwate University
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- Takaki Koichi
- Iwate University
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- Fujiwara Tamiya
- Iwate University
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- Yukimura Ken
- Doshisya University
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- Suda Yoshiyuki
- Hokkaido University
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A magnetically driven carbon shunting arc discharge was generated in nitrogen gas circumstance and amorphous carbon nitride (a-CNx) films were prepared using plasma-based ion implantation technique. A silicon substrate was immersed into the plasma, and a series of pulse voltage was applied to the substrate synchronizing with an ignition of the shunting arc with a peak current of 2.1 kA. The ambient nitrogen gas pressure was varied from 0.02 to 2 Pa. The shunting arc plasma was successfully produced and was accelerated along carbon rails. Rod heating energy to generate the shunting arc had the minimum value for variation of the ambient gas pressure. A spectroscopic measurement from the plasma light emission showed that the produced plasma contained nitrogen particles in ambient nitrogen gas circumstance. X-ray photoelectron spectroscopy analysis showed that the prepared carbon films contained nitrogen and was obtained to be N/C ratio of 0.35 at 2 Pa nitrogen gas pressure.
収録刊行物
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- 電気学会論文誌. A
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電気学会論文誌. A 127 (10), 599-604, 2007
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679571761536
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- NII論文ID
- 10019959214
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- NII書誌ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL書誌ID
- 8959879
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 使用不可