高周波マグネトロンスパッタリング法により作製した結晶性ＧａＴｅ薄膜の膜構造と光吸収スペクトル

• 大山 昌憲

  (株)サンバック

• 伊藤 浩

  東京工業高等専門学校電気工学科

• 竹内 学

  茨城大学工学部

書誌事項

タイトル別名

• Film Structure and Photo Absorption Spectrum of Crystalline GaTe Thin Films Growth by Radio-frequency Magnetron Sputtering Method

抄録

  Crystallized thin films of layered semiconductor GaTe were fabricated on silica glass by RF magnetron sputtering in H₂ and Ar atmospheres. The structure and optical characteristics of these GaTe films were investigated by X-ray diffraction, atomic force microscope measurements and UV-Vis spectrophotometer measurements. The XRD patterns of the films deposited at substrate temperature up to 600°C in argon gas only showed an amorphours structure. The films fabricated with an H₂ and Ar gas mixture were crystallized at a hydrogen mole fraction of more than 1 mol.%. Crystallinity and the orientation of the crystalline films showed a dependence on the hydrogen mole fraction. The photo absorption edges showed a direct transition with an optical gap of 1.57 eV, which was in good agreement with that of single GaTe crystals (1.66 eV). The processes of film deposition and crystallization were strongly affected by the presence of hydrogen.<br>

収録刊行物

• 真空

  真空 50 (11), 678-682, 2007

  一般社団法人 日本真空学会

キーワード

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

詳細情報

• CRID: 1390282679043976192
• NII論文ID: 10020009888
• NII書誌ID: AN00119871
• DOI: 10.3131/jvsj.50.678
• ISSN: 18809413
• ISSN: 05598516
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可