Micro-scale Thermal Effusivity/Conductivity of Silicon Carbide Ceramics

• Yamada Ikuko

  National Institute of Advanced Industrial Science and Technology (AIST)

• Kume Shoichi

  National Institute of Advanced Industrial Science and Technology (AIST)

• Watari Koji

  National Institute of Advanced Industrial Science and Technology (AIST)

• Hatori Kimihito

  Hudson Lab., Bethel Co., Suginami, Ibaraki

• Matusi Genzo

  Hudson Lab., Bethel Co., Suginami, Ibaraki

Bibliographic Information

Other Title

• 炭化ケイ素セラミックスの微小領域の熱浸透率／熱伝導率
• タンカ ケイソ セラミックス ノ ビショウ リョウイキ ノ ネツ シントウリツ ネツ デンドウリツ

Abstract

Thermal properties of sintered SiC polycrystal and single crystal at micrometer-scale were quantitatively measured by using a thermal microscope with thermo-reflectance and periodic heating techniques. The average value of thermal effusivity of the polycrystal was almost equal to that measured by laser flash technique. While the thermal effusivity of the single crystal was homogeneous, that of the polycrystal was heterogeneous. The portions of very low thermal effusivity were found to correspond to pores present. The thermal effusivities from the region excepting the pore portions in the sintered SiC were in the range of 21.0 to 25.8 kJ·s^-0.5m^-2K^-1and the variation of the thermal effusivity was estimated about 5 kJ·s^-0.5m^-2K^-1.

Journal

• Netsu Bussei

  Netsu Bussei 22 (3), 172-176, 2008

  JAPAN SOCIETY OF THERMOPHYSICAL PROPERTIES

Keywords

• silicon carbide
• SiC single crystal
• sintered SiC polycrystal
• thermal effusivity
• thermal conductivity

Details

• CRID: 1390282679641651840
• NII Article ID: 10021064639
• NII Book ID: AN10064743
• DOI: 10.2963/jjtp.22.172
• COI: 1:CAS:528:DC%2BD1cXhtVGgtbfF
• ISSN: 1881414X
• ISSN: 0913946X
• NDL BIB ID: 9628718
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9628718
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed