Solvothermal Preparation of Silicon Nanocrystals

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Silicon nanocrystals have been produced successfully by using silicon monoxide as the starting material via a simple solvothermal preparation method. The temperature needed in the solvothermal preparation is found to be as low as 220 °C when ethylenediamine is used as the solvent. The as-prepared silicon samples are of single-crystal nature with diameters around 5 nanometers and dispersed in an amorphous silica. The silicon nanocrystals became a little larger in size after removing the amorphous silica, according to the results of transmission electron microscope (TEM) characterization.

収録刊行物

  • Chemistry letters

    Chemistry letters 37(6), 644-645, 2008-06-05

    The Chemical Society of Japan

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各種コード

  • NII論文ID(NAID)
    10021081454
  • NII書誌ID(NCID)
    AA00603318
  • 本文言語コード
    ENG
  • 資料種別
    SHO
  • ISSN
    03667022
  • データ提供元
    CJP書誌  J-STAGE 
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