Deposition of a-Si:H films using cluster-controlled plasma CVD
-
- SHIRATANI Masaharu
- Graduate School of Information Science and Electrical Engineering, Kyushu University
-
- KOGA Kazunori
- Graduate School of Information Science and Electrical Engineering, Kyushu University
Bibliographic Information
- Other Title
-
- クラスター制御プラズマCVDによるa-Si:H薄膜堆積
- クラスター セイギョ プラズマ CVD ニ ヨル a Si H ハクマク タイセキ
Search this article
Abstract
<p>Cluster-controlled plasma chemical vapor deposition (CVD) has two directions that allow us to control the film structure and properties: one is the direction in which the contribution of clusters to film formation is suppressed to improve film qualities, and the other is the direction in which nanoparticle composite films are formed. In this paper, we focus on the former direction, and describe an in-situ observation method of the behavior of clusters as well as a control method of cluster formation, growth, and removal that allows us to realize cluster-controlled plasma CVD.</p>
Journal
-
- Oyo Buturi
-
Oyo Buturi 77 (2), 155-159, 2008-02-10
The Japan Society of Applied Physics
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390001277360618624
-
- NII Article ID
- 10021108570
-
- NII Book ID
- AN00026679
-
- ISSN
- 21882290
- 03698009
-
- NDL BIB ID
- 9370713
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- CiNii Articles
-
- Abstract License Flag
- Disallowed