Preparation of silicon nanocrystallites by pulsed laser ablation

• SUGIMURA Akira

  Department of Physics, Faculty of Science and Engineering, and Quantum Nanotechnology Laboratory, Konan University

Bibliographic Information

Other Title

• パルスレーザーアブレーションによるシリコンナノ結晶生成
• パルス レーザー アブレーション ニ ヨル シリコン ナノ ケッショウ セイセイ

Abstract

We studied the formation process of silicon nanocrystallites prepared by laser ablation in hydrogen gas atmosphere. The silicon nanocrystallites are found to be covered with hydrogen atoms that terminate the dangling bonds on the surface of the nanocrystallites. It is shown that the reaction of hydrogen atoms with silicon atoms begins to take place about 100 ns after the start of laser irradiation, which is suggested to be the reason why the hydrogen atoms exist only on the nanocrystallite surface. The aggregation of the stable nanocrystallites produces a new class of coupled quantum dot systems, which are expected to show interesting phenomena.

Journal

• Oyo Buturi

  Oyo Buturi 77 (2), 164-167, 2008-02-10

  The Japan Society of Applied Physics

Keywords

• laser ablation
• nanocrystal
• silicon
• hydrogen
• aggregation
• nano-chain
• fractal

Details

• CRID: 1390845702285696000
• NII Article ID: 10021108599
• NII Book ID: AN00026679
• DOI: 10.11470/oubutsu.77.2_164
• ISSN: 21882290
• ISSN: 03698009
• NDL BIB ID: 9370738
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9370738
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • CiNii Articles
• Abstract License Flag: Disallowed