NF_3ガス系プラズマRIEを用いたLiNbO_3単結晶のマスク非使用による微細表面加工 [in Japanese] Fine Surface Processing of LiNbO_3 Single Crystal by Mask-less Etching Using NF_3 System Gas Plasma RIE [in Japanese]
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Possibility of the deep etching using plasma reactive ion etching (RIE) without an etching-mask (mask-less) for -Z and +Z parts formed on the same surface by partially polarization reversing LiNbO<sub>3</sub> single crystal polarized in the direction of c-axis is investigated. NF<sub>3</sub>/H<sub>2</sub> mixture gas was used. The etching rates, depths and the profiles of etched surfaces were evaluated by atomic force microscopy (AFM) and optical microscope. The etching rate for -Z surface was larger than that for +Z surface. The extension of +Z domain by the partially polarization-reversing was observed. Applying the high voltage quickly for the partially polarization-reversing, the area of +Z domain was extended compared with applying voltage slowly. Apparent step at the boundary between -Z and +Z parts formed on the same surface was observed. Using NF<sub>3</sub>/H<sub>2</sub> mixture gas, segments are removed efficiently. It is concluded that RIE etching using NF<sub>3</sub>/H<sub>2</sub> mixture gas is suitable for processing of LiNbO<sub>3</sub> crystal surface without a etching-mask compared with CF<sub>4</sub>/H<sub>2</sub> mixture gas.
- IEEJ Transactions on Fundamentals and Materials
IEEJ Transactions on Fundamentals and Materials 128(4), 187-195, 2008-04-01
The Institute of Electrical Engineers of Japan