書誌事項
- タイトル別名
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- Fine Surface Processing of LiNbO<sub>3</sub> Single Crystal by Mask-less Etching Using NF<sub>3</sub> System Gas Plasma RIE
- NF3ガス系プラズマRIEを用いたLiNbO3単結晶のマスク非使用による微細表面加工
- NF3 ガスケイ プラズマ RIE オ モチイタ LiNbO3 タンケッショウ ノ マスク ヒシヨウ ニ ヨル ビサイ ヒョウメン カコウ
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抄録
Possibility of the deep etching using plasma reactive ion etching (RIE) without an etching-mask (mask-less) for -Z and +Z parts formed on the same surface by partially polarization reversing LiNbO3 single crystal polarized in the direction of c-axis is investigated. NF3/H2 mixture gas was used. The etching rates, depths and the profiles of etched surfaces were evaluated by atomic force microscopy (AFM) and optical microscope. The etching rate for -Z surface was larger than that for +Z surface. The extension of +Z domain by the partially polarization-reversing was observed. Applying the high voltage quickly for the partially polarization-reversing, the area of +Z domain was extended compared with applying voltage slowly. Apparent step at the boundary between -Z and +Z parts formed on the same surface was observed. Using NF3/H2 mixture gas, segments are removed efficiently. It is concluded that RIE etching using NF3/H2 mixture gas is suitable for processing of LiNbO3 crystal surface without a etching-mask compared with CF4/H2 mixture gas.
収録刊行物
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- 電気学会論文誌. A
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電気学会論文誌. A 128 (4), 187-195, 2008
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679571137920
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- NII論文ID
- 10021129572
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- NII書誌ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL書誌ID
- 9451729
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可