大電力自励半導体素子駆動法 [in Japanese] New Driving Method for Self Turn-off Semiconductor of High Power [in Japanese]
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This paper shows the new driving method for self turn-off devices of high power. The driving circuit by this method consists of mainly three transformers, switching circuits at these primary side and passive components like as diode, capacitors at these secondary side. Because all soft circuits of low power like as switching controller, signal receivers can be set at these primary side, conventional measures at the grounded side against outer noises and surges come to be much effective. This new method makes use of diodes as passive switches to prevent outputs of d. c. circuit from shorting through those secondary windings.
- IEEJ Transactions on Fundamentals and Materials
IEEJ Transactions on Fundamentals and Materials 128(4), 283-288, 2008-04-01
The Institute of Electrical Engineers of Japan