大電力自励半導体素子駆動法 New Driving Method for Self Turn-off Semiconductor of High Power

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This paper shows the new driving method for self turn-off devices of high power. The driving circuit by this method consists of mainly three transformers, switching circuits at these primary side and passive components like as diode, capacitors at these secondary side. Because all soft circuits of low power like as switching controller, signal receivers can be set at these primary side, conventional measures at the grounded side against outer noises and surges come to be much effective. This new method makes use of diodes as passive switches to prevent outputs of d. c. circuit from shorting through those secondary windings.

収録刊行物

  • 電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society  

    電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society 128(4), 283-288, 2008-04-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10021129708
  • NII書誌ID(NCID)
    AN10136312
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03854205
  • NDL 記事登録ID
    9452027
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-793
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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