大電力自励半導体素子駆動法

• 川畑 理

  三菱重工業（株）

• 亀井 俊典

  三菱重工業（株）

• 篠田 尚信

  三菱重工業（株）

書誌事項

タイトル別名

• New Driving Method for Self Turn-off Semiconductor of High Power
• ダイデンリョク ジレイ ハンドウタイ ソシ クドウホウ

抄録

This paper shows the new driving method for self turn-off devices of high power. The driving circuit by this method consists of mainly three transformers, switching circuits at these primary side and passive components like as diode, capacitors at these secondary side. Because all soft circuits of low power like as switching controller, signal receivers can be set at these primary side, conventional measures at the grounded side against outer noises and surges come to be much effective. This new method makes use of diodes as passive switches to prevent outputs of d. c. circuit from shorting through those secondary windings.

収録刊行物

• 電気学会論文誌．　Ａ

  電気学会論文誌．　Ａ 128 (4), 283-288, 2008

  一般社団法人 電気学会

キーワード

• 駆動法，大電力半導体素子，自励素子，変圧器，ダイオード，外部ノイズ

詳細情報

• CRID: 1390001204593507072
• NII論文ID: 10021129708
• NII書誌ID: AN10136312
• DOI: 10.1541/ieejfms.128.283
• ISSN: 13475533
• ISSN: 03854205
• NDL書誌ID: 9452027
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9452027
• Web Site: http://www.jstage.jst.go.jp/article/ieejfms/128/4/128_4_283/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可