バンド構造で変化する電子のスピン磁気能率 Change of Spin-Magnetic Moment Electron due to Band Structure

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著者

    • 笹部 薫 SASABE Shigeru
    • 首都大学東京 都市教養学部理工系 (電気電子) Dept. of Science and Technology Tokyo Metropolitan University

抄録

Recently, correct value of the spin-magnetic moment of the electron due to electric current was obtained by the present authors. The current was expressed as transition matrix element between positive energy and negative energy solutions of Dirac equation. The possibility of the change of the spin-magnetic moment in the semiconductor was also pointed out. Following that results, we roughly estimete the rate of the change for the InSb-type semiconductor.

収録刊行物

  • 電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society  

    電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society 128(4), 313-314, 2008-04-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10021129768
  • NII書誌ID(NCID)
    AN10136312
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    03854205
  • データ提供元
    CJP書誌  J-STAGE 
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