フラッシングスプレーCVD法を用いたHfO_2薄膜の作成 [in Japanese] Preparation of HfO_2 Thin Films Using Flashing Spray CVD Method [in Japanese]
Access this Article
Search this Article
The authors proposed the novel evaporation supply method, flashing spray chemical vapor deposition (FS-CVD). In the experiment, tetrakisethylmethylamidohafnium (TEMAH) was used as the precursor and n-pentane was used as the low boiling point organic solvent. The critical consolute temperature of TEMAH and n-pentane mixed material solution was 276K. The vapor pressure of the mixed material solution was ten times higher than that of TEMAH by formation of two-phase region. HfO<sub>2</sub> film was deposited on Si wafer by using TEMAH and n-pentane with FS-CVD. As the result, the uniformity of HfO<sub>2</sub> film was +/-5% and film thickness was 133.6nm. The uniformity of HfO<sub>2</sub> film of refractive index was +/-5% and refractive index was 1.63. It is found that the precursor was evaporated by flash boiling and HfO<sub>2</sub> film was deposited by decomposition.
- IEEJ Transactions on Fundamentals and Materials
IEEJ Transactions on Fundamentals and Materials 128(6), 456-457, 2008-06-01
The Institute of Electrical Engineers of Japan