磁気エネルギー回生スイッチ(MERS)用1200V IGBTモジュール Experimental Demonstration of 1200V IGBT Module for a Magnetic Energy Recovery Switch Application

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A bi-directional magnetic energy recovery switch (MERS) having a bridge configuration with four IGBTs has the feature that a power factor correction is possible regardless of the impedance and power frequency of the load by the automatic synchronized switching. For this application, a new 1200V IGBT module has been successfully designed and fabricated, for the first time. Since the switching frequency in the MERS application is so slow of 50-60 Hz that a lower forward voltage drop characteristic is strongly required for the IGBT and FWD chips even though their fast switching features are sacrificed. Therefore, the superior characteristics of lower on-state voltage drop of 1.54 V in the IGBT chip and 1.20 V in the FWD one can be attained and, as a result of this, total power dissipation can be successfully reduced by approximately more than 40% when compared to the conventional PWM converter application.

収録刊行物

  • 電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society  

    電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society 128(4), 677-682, 2008-04-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10021132221
  • NII書誌ID(NCID)
    AN10065950
  • 本文言語コード
    JPN
  • 資料種別
    NOT
  • ISSN
    03854221
  • NDL 記事登録ID
    9451632
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-795
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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