Experimental Demonstration of 1200V IGBT Module for a Magnetic Energy Recovery Switch Application
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- Takaku Taku
- Fuji Electric Device Technology Co., Ltd.
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- Iwamuro Noriyuki
- Fuji Electric Device Technology Co., Ltd.
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- Uchida Yoshiyuki
- Curamik Electronics K. K.
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- Shimada Ryuichi
- Integrated Research Institute, Tokyo Institute of Technology
Bibliographic Information
- Other Title
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- 磁気エネルギー回生スイッチ(MERS)用1200V IGBTモジュール
- ジキ エネルギー カイセイ スイッチ MERS ヨウ 1200V IGBT モジュール
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Abstract
A bi-directional magnetic energy recovery switch (MERS) having a bridge configuration with four IGBTs has the feature that a power factor correction is possible regardless of the impedance and power frequency of the load by the automatic synchronized switching. For this application, a new 1200V IGBT module has been successfully designed and fabricated, for the first time. Since the switching frequency in the MERS application is so slow of 50-60 Hz that a lower forward voltage drop characteristic is strongly required for the IGBT and FWD chips even though their fast switching features are sacrificed. Therefore, the superior characteristics of lower on-state voltage drop of 1.54 V in the IGBT chip and 1.20 V in the FWD one can be attained and, as a result of this, total power dissipation can be successfully reduced by approximately more than 40% when compared to the conventional PWM converter application.
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 128 (4), 677-682, 2008
The Institute of Electrical Engineers of Japan
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Details
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- CRID
- 1390001204605877376
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- NII Article ID
- 10021132221
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- NII Book ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL BIB ID
- 9451632
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed