InPベース波長2μm帯InGaAsSbN赤外量子井戸レーザ [in Japanese] InP-Based InGaAsSbN Quantum Well Laser Diodes in 2μm Wavelength Region [in Japanese]
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InGaAsSbN quantum well (QW) laser diodes on InP in 2μm wavelength region were grown by molecular beam epitaxy (MBE). It was found that increase in Sb composition improved properties of InGaAsSbN QW laser diodes. We observed electroluminescence at 4.51<i>μ</i>m at room temperature for InAsSbN QW laser diodes, and laser operation at 2.31 2μm at 190K. Annealing effects were also studied.
- IEEJ Transactions on Electronics, Information and Systems
IEEJ Transactions on Electronics, Information and Systems 128(5), 727-731, 2008-05-01
The Institute of Electrical Engineers of Japan