GaInAsPレーザの端面活性層での光吸収による劣化機構とその抑制策 Degradation Analysis and Degradation Suppression Technology Caused by Light Absorption at Active Layer Facet of GaInAsP Laser Diode

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Electrostatic discharge induced degradation is one of the serious reliability problems of GaInAsP/InP laser diode. The authors have conducted an analysis on electrostatic discharge induced degradation, and clarified the principal degradation mechanism. Main cause of degradation is heating by light absorption at the active layer facet. This phenomenon is similar to the catastrophic optical damage that occurs in a GaAs-based high power laser diode. This problem is more serious in recent tendency to high power demand. Therefore degradation suppression technology is extremely important. We focused on facet coating that is one of key process to suppress facet degradation. And we demonstrated that the facet degradation is successfully suppressed by inserting an aluminum ultra-thin layer between the semiconductor and dielectric coating films. This effect is caused by reduction in surface recombination. This degradation suppression technology has potential to be applied to not only GaInAsP/InP laser diode but arbitrary InP-based laser diode.

収録刊行物

  • 電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society  

    電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society 128(5), 732-737, 2008-05-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10021132326
  • NII書誌ID(NCID)
    AN10065950
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03854221
  • NDL 記事登録ID
    9495417
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-795
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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