赤・近赤外パワー半導体レーザの放射線耐性 [in Japanese] Radiation Hardness in Red and Infrared High Power Semiconductor Lasers [in Japanese]
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Proton beams with energies of 10MeV and 200MeV were irradiated onto red (GaInP) and infrared (AlGaAs) high power (broad stripe) semiconductor lasers. Threshold current increases with increasing proton fluence. The change of threshold current in infrared lasers is much larger than that in red lasers. The proton energy dependence of threshold current damage factor is consistent with that of Non-Ionizing Energy Loss to some extent. Forward bias annealing effects were observed.
- IEEJ Transactions on Electronics, Information and Systems
IEEJ Transactions on Electronics, Information and Systems 128(5), 738-743, 2008-05-01
The Institute of Electrical Engineers of Japan