230-270nm深紫外AlGaN系LEDの進展 Development of 230-270nm AlGaN-Based Deep UV LEDs
We demonstrated AlGaN multi-quantum well (MQW) deep ultraviolet (UV) light-emitting diodes (LEDs) with wavelength in the range of 227.5-273 nm fabricated on high-quality AlN buffers on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). We realized crack-free, thick AlN buffer on sapphire with low threading dislocation density (TDD) and atomically flat surface by using ammonia (NH<sub>3</sub>) pulse-flow multi-layer (ML) growth technique. We obtained single-peaked operation of the AlGaN-MQW LED with wavelength of 227.5 nm, which is the shortest wavelength of AlGaN-based LED on sapphire. The maximum output power and external quantum efficiency (EQE) of the 261 and 227.5 nm LEDs were 1.65 mW and 0.23% under room-temperature (RT) continuous-wave (CW) operation, and 0.15mW and 0.2% under RT pulsed operation, respectively.
- 電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society
電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society 128(5), 748-756, 2008-05-01
The Institute of Electrical Engineers of Japan