増大する微細MOSトランジスタの特性ばらつき : 現状と対策 [in Japanese] Variability in Scaled MOS Transistors : Present Status and Measures [in Japanese]
Access this Article
Search this Article
The present status of variability in characteristics of the state-of-the-art MOS transistors is presented. The statistics of threshold voltage of arrayed transistors show the normal distribution. Special emphasis is placed on the analysis of random threshold voltage fluctuations. A new method to compare the amount of random variations in different fabs and different technologies is proposed. Finally, the measures to the variability of scaled CMOS are discussed.
- IEEJ Transactions on Electronics, Information and Systems
IEEJ Transactions on Electronics, Information and Systems 128(6), 820-824, 2008-06-01
The Institute of Electrical Engineers of Japan