GaAs系HBTの信頼性と結晶欠陥の相関 Hydrogen and Carbon-Related Defects in Heavily Carbon-Doped GaAs Induced Degradation under Minority-Carrier Injection

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GaAs/AlGaAs hetero-junction bipolar transistors (HBTs) have attracted much attention because of their high-speed performance. However, long-term operation seriously degrades the device characteristics: Current gain decreases and low-bias-leakage current increases. This degradation has long been an issue in GaAs-based devices operated under minority-carrier injection, like laser diodes. The cause of degradation is thought to be in the carbon-doped base, but this is not yet certain. In this paper degradation of HBTs is described, especially GaAs/AlGaAs HBTs with heavily carbon-doped base layer. Here, two types of the device degradation are found, i.e., hydrogen-related degradation and carbon-related degradation. The mechanisms governing the degradation are discussed from the framework of recombination enhanced defect reaction (REDR) and charge state effect (CSE).

収録刊行物

  • 電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society  

    電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society 128(6), 838-845, 2008-06-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10021132547
  • NII書誌ID(NCID)
    AN10065950
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03854221
  • NDL 記事登録ID
    9531775
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-795
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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