Analysis of Millimeterwave Amplifier Module with Surface Wave Mode Transmission Line by FDTD Electromagnetic-Semiconductor Device Co-Simulation

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  • Ishikawa Ryo
    Advanced Wireless Communication Research Center (AWCC), The University of Electro-Communications
  • Honjo Kazuhiko
    Advanced Wireless Communication Research Center (AWCC), The University of Electro-Communications
  • Nakajima Masayuki
    Murata Manufacturing Co., Ltd.

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  • ＦＤＴＤ電磁界・半導体デバイス統合解析によるミリ波表面波モード線路増幅モジュールの実動作解析
  • FDTD デンジカイ ハンドウタイ デバイス トウゴウ カイセキ ニ ヨル ミリハ ヒョウメンハ モード センロ ゾウフク モジュール ノ ジツ ドウサ カイセキ

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Abstract

Direct analysis for a millimeterwave amplifier module has been demonstrated by using FDTD electromagnetic and semiconductor device co-simulation technique. The millimeterwave amplifier module consists of an HFET and planar dielectric transmission lines (PDTL) at 60-GHz region. The PDTL with a surface wave transmission mode has a low-loss transmission characteristic at millimeterwave region using a low-loss ceramic substrate. However, the transmission wave on the PDTL tends to be scattered by irregular structures and impedance mismatching. Furthermore, it is predicted that reflected scattered waves at edges of the substrate interfere with incident and transmission waves on the PDTL. Using the co-simulation technique, influence of the scattering waves was investigated in detail for the amplifier module.

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