Reduction of On-Resistance in Ion-Implanted GaN/AlGaN/GaN HEMTs with Low Gate Leakage Current

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  • Nomoto Kazuki
    Department of Electronics, Electrical and Computer Engineering and Research Center of Ion Beam Technology , Hosei University
  • Satoh Masataka
    Department of Electronics, Electrical and Computer Engineering and Research Center of Ion Beam Technology , Hosei University
  • Nakamura Tohru
    Department of Electronics, Electrical and Computer Engineering and Research Center of Ion Beam Technology , Hosei University

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Other Title
  • 低ゲートリーク電流Ｓｉイオン注入ＧａＮ／ＡｌＧａＮ／ＧａＮ　ＨＥＭＴのオン抵抗低減化
  • テイ ゲート リーク デンリュウ Si イオン チュウニュウ GaN AlGaN GaN HEMT ノ オン テイコウ テイゲンカ

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Abstract

Si ion-implanted GaN/AlGaN/GaN HEMTs with extremely low gate leakage current and low source resistance without any recess etching process are demonstrated. The source/drain regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on sapphire substrate. Using ion implantation into source/drain regions with energy of 80 keV, the performances were significantly improved. On-resistance reduced from 26.2 to 4.3 Ω·mm. Saturation drain current and maximum transconductance increased from 284 to 723 mA/mm and from 48 to 147 mS/mm.

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