PtSiを用いたせり上げサリサイドの選択エッチングプロセスとHf混晶化による仕事関数変調 [in Japanese] A Study on Selective Etching for Elevated PtSi Salicide Process and Work Function Modulation of PtSi Alloying with Hf [in Japanese]
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The selective etching process for elevated self-aligned silicide (salicide) utilizing PtSi has been investigated. We have developed novel selective etching process utilizing a diluted aqua regia followed by a diluted HF light etching. It was found that the residual Pt-rich silicide layers on the sidewall have been successfully removed. We have also investigated a work function modulation of PtSi alloying with Hf. The barrier height for electron of PtSi has been reduced approximately 0.1 eV for Pt<sub>x</sub>Hf<sub>1-x</sub>Si formed by the silicidation of Pt(17 nm)/Hf(4 nm)/Si(100) stacked layer structures.
- IEEJ Transactions on Electronics, Information and Systems
IEEJ Transactions on Electronics, Information and Systems 128(6), 900-904, 2008-06-01
The Institute of Electrical Engineers of Japan