書誌事項
- タイトル別名
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- Direct Measurement of Capacitance Parameters in Nanometer-Scale MOSFETs
- ナノメータ MOSFET ニ オケル ヨウリョウ パラメータ ノ チョクセツ ソクテイ
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A simple measurement method is proposed for extracting capacitances in nanometer-scale metal-oxide-semiconductor field-effect transistors (MOSFETs). The method utilizes two serially connected MOSFETs and an optional metal layer above the intermediate node between MOSFETs. Gate-drain overlap capacitance and capacitances around the intermediate node, including one related to the metal layer, can be obtained by measuring the transfer current when two MOSFETs are alternately turned on at high frequency. High sensitivity in the order of attofarad is demonstrated using silicon-on-insulator (SOI) MOSFETs with gate length of 140∼300 nm and channel width of 320 nm. The proposed method is useful not only in optimizing the high-frequency performance of the scale-down devices, but also in estimating the instability (i.e. kT/C noise) and single-electron charging effect in nanometer-scale circuits.
収録刊行物
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- 電気学会論文誌Ｃ（電子・情報・システム部門誌）
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電気学会論文誌Ｃ（電子・情報・システム部門誌） 128 (6), 905-911, 2008
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390282679582741120
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- NII論文ID
- 10021132673
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- NII書誌ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL書誌ID
- 9531948
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可