変換器高周波化のためのSi-IGBTとSiC-SBDの検討 [in Japanese] A Study on Switching Frequency Limitation in Combination of Si-IGBT and SiC-SBD [in Japanese]
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In this paper, a power converter in combination of 1200V Si-IGBT and SiC-SBD is investigated for decrease of devise loss in compare with Si-PiN diode. To use device simulation which is based on considering of switching experimental results and static characteristics is employed to estimate device loss. In device simulation, also, we adjust an anode injection efficiency of Si-IGBT to increase switching speed and optimize trade-off relation between on-state voltage and switching loss of Si-IGBT due to minimize total device loss. As the device simulation result, the switching frequency of in combination optimized Si-IGBT and SiC-SBD has approximately three times as high as Si-IGBT with Si-PiN diode. Moreover, in this paper, the limitation of switching frequency by comprehensive total device loss with present heat cooling ability is discussed.
- IEEJ Transactions on Sensors and Micromachines
IEEJ Transactions on Sensors and Micromachines 128(5), 569-576, 2008-05-01
The Institute of Electrical Engineers of Japan