変換器高周波化のためのSi-IGBTとSiC-SBDの検討 A Study on Switching Frequency Limitation in Combination of Si-IGBT and SiC-SBD
In this paper, a power converter in combination of 1200V Si-IGBT and SiC-SBD is investigated for decrease of devise loss in compare with Si-PiN diode. To use device simulation which is based on considering of switching experimental results and static characteristics is employed to estimate device loss. In device simulation, also, we adjust an anode injection efficiency of Si-IGBT to increase switching speed and optimize trade-off relation between on-state voltage and switching loss of Si-IGBT due to minimize total device loss. As the device simulation result, the switching frequency of in combination optimized Si-IGBT and SiC-SBD has approximately three times as high as Si-IGBT with Si-PiN diode. Moreover, in this paper, the limitation of switching frequency by comprehensive total device loss with present heat cooling ability is discussed.
- 電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society
電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society 128(5), 569-576, 2008-05-01
The Institute of Electrical Engineers of Japan