Preparation of Macroporous Semiconductor Gas Sensors and Their Odur Sensing Properties
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- Nonaka Shuhei
- Graduate School of Science and Technology
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- Hyodo Takeo
- Faculty of Engineering, Nagasaki University
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- Shimizu Yasuhiro
- Faculty of Engineering, Nagasaki University
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- Egashira Makoto
- Faculty of Engineering, Nagasaki University
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抄録
Macroporous (mp-) oxide films (SnO2, WO3 and In2O3) were fabricated by a modified sol-gel technique employing polymethylmethacrylate (PMMA) microspheres as a template. NH3 responses of all the mp-oxide films prepared were much lower than those of reference (R-) oxide films fabricated by screen printing of the sol-gel driven powder, probably due to less reactivity of NH3 originating from their macroporous structure. On the other hand, mp-oxide films, especially mp-In2O3, showed much larger H2S response than R-oxide films. Furthermore, the addition of CuO was quite effective for improving the H2S response and the recovery speed of mp-In2O3.
収録刊行物
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- 電気学会論文誌E(センサ・マイクロマシン部門誌)
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電気学会論文誌E(センサ・マイクロマシン部門誌) 128 (4), 141-144, 2008
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204460894848
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- NII論文ID
- 10021135129
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL書誌ID
- 9452185
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可