Preparation of Oxygen Permeable Thin Films on YSZ Porous Substrates
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- Takahashi Hiroo
- Department of Materials Science, Graduate School of Engineering, Tohoku University
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- Takamura Hitoshi
- Department of Materials Science, Graduate School of Engineering, Tohoku University
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- Okada Masuo
- Department of Materials Science, Graduate School of Engineering, Tohoku University
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Abstract
Mixed oxide-ion and electronic conductive thin films with the composition of (Ce0.85Sm0.15)O2−δ-15 vol%MnFe2O4 (CSO-MFO) were prepared on porous yttria stabrized zirconia substrates by a spin coating process, and their oxygen permeation flux densities were measured. The porous substrates were prepared from ZrO2-3 mol%Y2O3 (3YSZ)-33 vol%carbon and NiFe2O4. 3YSZ porous substrates were obtained from 3YSZ-33 vol%carbon by sintering at 1350°C under Ar for 5 h and following oxidation at 800°C under air for 2 h. For 3YSZ-33 vol%NiFe2O4, the optimum condition was sintering at 1400°C under air for 5 h and following reduction at 800°C under H2 for 2 h. A CSO-MFO film was prepared by a spin coating process on the substrate. The thickness of the CSO-MFO was approximately 150 nm. Oxygen flux density of the CSO-MFO sample was found to be 8.9×10−8 mol·cm−2·s−1.
Journal
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 49 (3), 453-456, 2008
The Japan Institute of Metals and Materials
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Details 詳細情報について
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- CRID
- 1390282679226367232
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- NII Article ID
- 10021144653
- 130004453928
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- NII Book ID
- AA1151294X
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- ISSN
- 13475320
- 13459678
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- NDL BIB ID
- 9412908
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed