Direct Evidence of Polycrystalline Silicon Thin Films Formation during Aluminum Induced Crystallization by <I>In-Situ</I> Heating TEM Observation

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  • Ii Seiichiro
    Department of Mechanical Engineering, Faculty of Engineering, Sojo University
  • Hirota Takeshi
    Department of Molecular and Materials Sciences, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
  • Fujimoto Kensuke
    Department of Molecular and Materials Sciences, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
  • Sugimoto Youhei
    Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
  • Takata Naoki
    Department of Metallurgy and Ceramics Science, Graduate School of Science and Technology, Tokyo Institute of Technology
  • Ikeda Ken-ichi
    Department of Electrical and Material Sciences, Faculty of Engineering Sciences, Kyushu University
  • Nakashima Hideharu
    Department of Electrical and Material Sciences, Faculty of Engineering Sciences, Kyushu University
  • Nakashima Hiroshi
    Art, Science and Technology Center for Cooperative Research, Kyushu University

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  • Direct evidence of polycrystalline silicon thin films formation during aluminum induced crystallization in-situ heating TEM observation
  • Direct evidence of polycrystalline silicon thin films formation during aluminum induced crystallization by in situ heating TEM observation

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Abstract

The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) process was investigated by scanning transmission electron microscopy (STEM) and in-situ heating transmission electron microscopy (TEM) observations. The STEM observation and electron dispersive X-ray spectroscopy (EDS) analysis of ex-situ heat-treated specimen revealed that the a-Si layer and Al layer switched the positions with each other during the heat treatment, resulting the crystallization of the a-Si layer. Furthermore, the in-situ heating TEM observation and EDS analysis of as-deposited specimen revealed the mixed state of Si and Al in an a-Si/Al film and the lateral growth of crystalline Si grain during the heating. The mechanism of AIC and switching layers were also discussed from the experimental results and the binary phase diagram of Al-Si system.

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 49 (4), 723-727, 2008

    The Japan Institute of Metals and Materials

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