Thermoelectric Properties of Silicon Carbide Sintered with Addition of Boron Carbide, Carbon, and Alumina

• Ohba Yasuhiro

  Department of Materials Science and Engineering, Faculty of Engineering, Kyushu Institute of Technology

• Shimozaki Toshitada

  Center for Instrumental Analysis, Kyushu Institute of Technology

• Era Hidenori

  Department of Materials Science and Engineering, Faculty of Engineering, Kyushu Institute of Technology

抄録

The thermoelectric properties were examined of SiC specimens prepared by mixing α-SiC powder with B₄C, C, and Al₂O₃ and then sintering at 2100°C. Sintered specimens containing Al₂O₃ up to 3% with 0.5% B₄C and 2.5% C exhibited the highest densities. The electrical conductivities of these specimens increased with the Al₂O₃ content up to 3%. In contrast, the Seebeck coefficients of these specimens decreased with the addition of 1% Al₂O₃, but then barely decreased with the further addition of Al₂O₃. The maximum value of the power factor, 9.43×10⁻⁴ W/mK² at 800°C, was obtained with specimens sintered with 3% Al₂O₃ as well as B₄C and C. These results showed that the power factor of SiC ceramics could be enhanced by adding proper amounts of B₄C, C, and Al₂O₃ into them.

収録刊行物

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 49 (6), 1235-1241, 2008

  公益社団法人 日本金属学会

キーワード

• thermoelectric property
• high temperature
• silicon carbide
• aluminum oxide
• boron carbide

詳細情報

• CRID: 1390282679225776768
• NII論文ID: 10021147219
• NII書誌ID: AA1151294X
• DOI: 10.2320/matertrans.mra2007232
• ISSN: 13475320
• ISSN: 13459678
• NDL書誌ID: 9518978
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9518978
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/49/6/49_MRA2007232/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可