Effect of CH/C_2 Species Density on Surface Morphology of Diamond Film Grown by Microwave Plasma Jet Chemical Vapor Deposition

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The present research employs <I>in-situ</I> plasma Optical Emission Spectroscopy (OES) to explore the effect of microwave plasma jet chemical vapor deposition (MPJCVD) on activating CH<SUB>4</SUB>+H<SUB>2</SUB> plasma environment and synthesizing diamond film. Surface morphology and main orientation of lattice plane of the diamond synthesized under different processing parameters are also examined. Since species such as CH, H<SUB>2</SUB>, hydrogen Balmer alpha (H<SUB>α</SUB>), carbon dimer (C<SUB>2</SUB>) and hydrogen Balmer beta H<SUB>β</SUB> in the plasma radical are easily influenced by gas concentration, substrate temperature and processing parameters, <I>in-situ</I> OES is employed to diagnose <I>in-situ</I> OES diagnosing is employed to composition of plasma species in the synthesis of diamond film. Our findings reveal that species such as CH, C<SUB>2</SUB> and H<SUB>β</SUB> in microwave plasma jet have significant influence on grain size, surface morphology and H/C carbon concentration. The Raman spectrum measurement can prove the relationship between CH/C<SUB>2</SUB> species density and diamond surface morphology.

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  • Materials transactions

    Materials transactions 49(6), 1380-1384, 2008-06-01

    The Japan Institute of Metals and Materials

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各種コード

  • NII論文ID(NAID)
    10021147637
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    9519417
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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