Measurements and Analysis of Molten Silicon Temperature and Flow in Solidification Process of Solar Silicon

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In order to improve the conversion efficiency (up to a final target over 20% of conversion efficiency) of the photovoltaic cell with multi-crystalline silicon, it is necessary to optimize the casting conditions of silicon ingot such as purifications of mold, mold coating material, atmosphere gas and solidification rate. We have investigated the influence of solidification conditions on the microstructure by the experimental measurement of molten silicon temperature and the simulation of molten silicon flow and temperature distribution in rectangular crucible. It was detected that large supercooling in crucible bottom was effective in enlarging the crystal grain size. High quality silicon ingot was obtained by controlling the solidification rate. The diffusion length of the wafer (thickness 5mm, resistivity 0.65Ω·cm, at bare state) was attained to 350μm or longer from this silicon ingot. Consequently, the conversion efficiency of the cell reached to 18.3% (cell area 25cm<SUP>2</SUP>) and 20.3%(cell area 4cm<SUP>2</SUP>) using this silicon wafer.

収録刊行物

  • 実験力学 : journal of JSEM  

    実験力学 : journal of JSEM 8, 133-137, 2008-06-25 

    The Japanese Society for Experimental Mechanics

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各種コード

  • NII論文ID(NAID)
    10021156222
  • NII書誌ID(NCID)
    AA11822914
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13464930
  • NDL 記事登録ID
    9568270
  • NDL 雑誌分類
    ZM17(科学技術--科学技術一般--力学・応用力学)
  • NDL 請求記号
    Z74-C355
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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