シャンティングアークによる成膜プロセス Deposition Process Using a Shunting Arc Discharge

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  Shunting arc discharge is a pulsed plasma source of metals and semimetal materials, and is ignited without any trigger sources at a wide range of the gas pressures, from vacuum to atmospheric pressure under identical discharge conditions. In this article, an application of the shunting arc plasma for a preparation of thin film and its process are described. The process using the shunting arc plasma can be divided into two phases; an ignition and an ion extraction phases. The shunting arc plasma is generated by a joule heating with a pulsed large current when the heating energy exceeds a critical value. The generated plasma expanded from the center of source rod with velocity of around 1 km/s. The ions contained in the arc plasma can be extracted by applying a negative pulse to a substrate holder. When the shunting arc is produced in vacuum, only the solid materials are deposited on the substrate. However, in a low-presser gas medium, electrons produced in the shunting arc are accelerated toward the wall, colliding with the gas molecules in the chamber to ionize them. Deposition rate using the shunting arc plasma can be improved with the use of the Lorentz force, which accelerates the entire plasma toward the substrate.<br>

収録刊行物

  • 真空  

    真空 51(2), 75-80, 2008-02-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10021156683
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    REV
  • ISSN
    18822398
  • NDL 記事登録ID
    9411221
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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