Si(111)面におけるRuシリサイドの形成と成長過程 The Formation and Growth Process of Ru Silicide on Si(111) Surface

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  Formation process of nanoscale ruthenium silicide islands on a Si(111) surfaces was studied with scanning tunneling microscopy for the first time. The ruthenium silicide islands were formed and grown on the only disorder-region, and small island grew up in three dimensions by incorporation of clusters including Ru exist on disorder-region and silicon atoms during thermal annealing. As the sizes of islands approaches 400 nm<sup>2</sup> or more, the growth in two dimensional in a plane was limited, and it grew up in the direction of height. We will discuss about the formation process of ruthenium silicide on a Si(111) surface.<br>

収録刊行物

  • 真空  

    真空 51(3), 128-130, 2008-03-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10021156872
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    18822398
  • NDL 記事登録ID
    9471348
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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